06035J2R2BBS 查看數據表（PDF） - NXP Semiconductors.

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06035J2R2BBS

Heterojunction Bipolar Transistor Technology (InGaP HBT)

NXP Semiconductors. 

Table 4. Electrical Characteristics (VCC1 = VCC2 = VBIAS = 5 Vdc, 2140 MHz, TA = 25C, 50 ohm system, in Freescale W--CDMA

Application Circuit)

Characteristic

Small--Signal Gain (S21) (1)

Input Return Loss (S11)

Symbol

Min

Typ

Max

Unit

Gp

23.6

27.2

—

dB

IRL

—

--10.7

—

dB

Output Return Loss (S22)

ORL

—

--15.5

—

dB

Power Output @ 1dB Compression, CW

P1dB

—

28.2

—

dBm

Third Order Output Intercept Point, Two--Tone CW

OIP3

—

44.5

—

dBm

Noise Figure

Supply Current (1)

Supply Voltage

Table 5. ESD Protection Characteristics

NF

—

3.3

—

dB

ICQ

62.5

70

VCC

—

5

77

mA

—

V

Test Methodology

Class

Human Body Model (per JESD22--A114)

0, rated to 150 V

Machine Model (per EIA/JESD22--A115)

A

Charge Device Model (per JESD22--C101)

III

Table 6. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

3

260

C

1. Specified data is based on performance of soldered down part in W--CDMA application circuit.

VBA1

VBIAS

RFin

VBA2

VCC1

VCC1

BIAS

CIRCUIT

GND GND GND

Figure 1. Functional Block Diagram

RFout

RFout

VCC2

VBA2 VCC1 VCC1

12 11 10

VBA1 1

VBIAS 2

RFin 3

9 RFout

8 RFout

7 VCC2

456

GND GND GND

Figure 2. Pin Connections

MMA20312BVT1

2

RF Device Data

Freescale Semiconductor, Inc.

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