DSA6312ML3GB-T 查看數據表（PDF） - Microchip Technology

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DSA6312ML3GB-T

Ultra-Small, Ultra-Low Power MEMS Oscillator with Spread Spectrum for Automotive

Microchip Technology 

DSA63XX

SPREAD SPECTRUM

Ordering Code

A

B

C

D

E

F

G

H

I

J

K

L

M

Spread Percentage

±0.25%

±0.5%

±1.0%

±1.5%

±2.0%

±2.5%

–0.25%

–0.5%

–1.0%

–1.5%

–2.0%

–3.0%

Custom

Spread Type

Center-Spread

Center-Spread

Center-Spread

Center-Spread

Center-Spread

Center-Spread

Down-Spread

Down-Spread

Down-Spread

Down-Spread

Down-Spread

Down-Spread

Center-Spread or Down-Spread

TEMPERATURE SPECIFICATIONS (Note 1)

Parameters

Sym. Min. Typ.

Max. Units

Conditions

Temperature Ranges

Junction Operating Temperature

TJ

–40

—

+150

°C —

Storage Ambient Temperature Range

TA

–55

—

+150

°C —

Soldering Temperature

TS

—

+260

—

°C 40 sec. max.

Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable

junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the max-

imum allowable power dissipation will cause the device operating junction temperature to exceed the max-

imum +150°C rating. Sustained junction temperatures above +150°C can impact the device reliability.

 2019 Microchip Technology Inc.

DS20006189A-page 5

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