Typical Characteristic Curves
Output Characteristics
-20
Ta=25℃
Pulsed
VGS=-8V
VGS=-4.5V
-16
VGS=-2.5V
VGS=-2.0V
-12
VGS=-1.8V
-8
-4
0
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
DRAIN TO SOURCE VOLTAGE VDS (V)
100
Ta=25℃
Pulsed
80
60
RDS(ON) ID
VGS=-1.8V
VGS=-2.5V
40
VGS=-4.5V
20
0
0
-2
-4
-6
-8
-10
DRAIN CURRENT ID (A)
--10
Pulsed
IS - VSD
Ta=125℃
-1
- 0.1
Ta=25℃
- 0.01
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
SOURCE TO DRAIN VOLTAGE VSD (V)
www.pingjingsemi.com
Revision:1.1 Jul-2019
PJM3415PSA-4K
Silicon P-Channel Power MOSFET
-2.0
V =-3V
DS
Pulsed
-1.6
Transfer Characteristics
-1.2
Ta=125℃
Ta=25℃
-0.8
-0.4
0.0
0.0
120
100
80
60
40
20
0
0
-1.0
-0.3
-0.6
-0.9
-1.2
-1.5
GATE TO SOURCE VOLTAGE VGS (V)
RDS(ON) - VGS
Pulsed
I =-4A
D
Ta=125℃
Ta=25℃
-2
-4
-6
-8
-10
GATE TO SOURCE VOLTAGE VGS (V)
Threshold Voltage
-0.8
-0.6
ID=250uA
-0.4
-0.2
0.0
25
50
75
100
125
JUNCTION TEMPERATURE Tj (℃)
3/6