BUS131H 查看數據表（PDF） - Inchange Semiconductor
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BUS131H Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUS131H
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V (Min)
APPLICATIONS
·Designed for use in very fast switching applications in
inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCES Collector- Emitter Voltage (VBE= 0)
850
V
VCEO Collector-Emitter Voltage
450
V
VEBO Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current
4
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
8
A
125
W
200
℃
Tstg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.4 ℃/W
isc website：www.iscsemi.cn
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