AP3N2R8MT 查看數據表（PDF） - Advanced Power Electronics Corp
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AP3N2R8MT Datasheet PDF : 6 Pages
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AP3N2R8MT
12
I D = 20 A
10 V DS =15V
8
6
4
2
0
0
20
40
60
80
100
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
8000
6000
C iss
4000
2000
C oss
C rss
0
1
5
9
13
17
21
25
29
33
37
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
100
Operation in this
area limited by
RDS(ON)
10us
100us
10
1ms
1
T C =25 o C
Single Pulse
0.1
0.01
0.1
1
10ms
DC
10
100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
.
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
120
100
80
Limited by package
60
40
20
0
25
50
75
100
125
150
T C , Case Temperature ( o C )
Fig 11. Drain Current v.s. Case
Temperature
VG
10V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
4
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