B5817WS 查看數據表（PDF） - Weitron Technology
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B5817WS Datasheet PDF : 3 Pages
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B5817WS/B5819WS
Maximum Ratings ( TA=25°C Unless otherwise noted)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
RMS Reverse Voltage
Symbol
VRRM
VRWM
VR
VR(RMS)
IFAV
B5817WS
20
14
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimpose on
IFSM
rated load (JEDEC Method)
B5819WS
40
28
1.0
4.0
Power Dissipation
PD
200
Typical thermal Resistance junction to
Ambient Note (1)
Operating & Storage Temperature Range
R JA
TJ TSTG
625
-55 to +150
Unit
V
V
A
A
mW
°C/W
°C
Electrical Characteristics ( TA=25 °C Unless otherwise noted)
Characteristic
Minimum Reverse Breakdown Voltage (2)
(IR=1mA)
Symbol
V(BR)R
B5817W
20
Forward Voltage Note(2)
IF=1A Tj=25°C
IF=3A Tj=25°C
VF
0.45
0.75
Reverse Current Note(2)
VR=20V, Tj=25°C
VR=40V, Tj=25°C
IR
1.0
-
B5819W
40
0.60
0.90
-
1.0
Junction Capacitance f=1MHZ, VR=4VDC
Cj
120
Unit
V
V
mA
PF
Device Marking
Item
B5817WS
Marking
SJ
Eqivalent Circuit diagram
1
2
B5819WS
SL
1
2
Note: 1. Valid provited that leads are kept at ambient tememperature.
2. Pulse Test : Pulse width = 300µs, Duty Cycle ≤ 2%
WEITRON
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http://www.weitron.com.tw
03-Jun-05
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