ACE3401BMH 查看數據表（PDF） - ACE Technology Co., LTD.

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ACE3401BMH

P-Channel Enhancement Mode MOSFET

ACE Technology Co., LTD. 

Typical Characteristics

Gate Charge

ACE3401

P-Channel Enhancement Mode MOSFET

On-Resistance vs. Junction Temperature

Oq Total Gate Charge (nC)

Source-Drain Diode Forward Voltage

TJ – Junction Temperature (℃)

On-Resistance vs. Gate-to-Source Voltage

VSD Source to Drain Voltage (V)

VGS – Gate to Source Voltage (V)

VER 1.4 4

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