SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
2N3904SC
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
·Low Leakage Current
: ICEX=50nA(Max.), IBL=50nA(Max.)
@VCE=30V, VEB=3V.
·Excellent DC Current Gain Linearity.
·Low Saturation Voltage
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.
·Complementary to 2N3906SC.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
40
Emitter-Base Voltage
VEBO
6
Collector Current
IC
200
Base Current
IB
50
Collector Power Dissipation
PC *
350
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
* PC : Package Mounted On 99.5% Alumina 10×8×0.6㎜)
UNIT
V
V
V
mA
mA
mW
℃
℃
2015. 5. 12
Revision No : 0
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