BDT88(2012) 查看數據表（PDF） - Comset Semiconductors
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BDT88 Datasheet PDF : 4 Pages
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PNP BDT82 – BDT84 – BDT86 – BDT88
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
ICB0
Collector Cutoff Current
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain (*)
VCE(SAT)
Collector-Emitter
Saturation Voltage (*)
VBE
Base-Emitter Voltage (*)
Test Condition(s)
Min Typ Max Unit
IE=0A, VCB = -60 V
BDT82
IE=0A, VCB = -80 V
BDT84
-
IE=0A, VCB = -100 V BDT86
IE=0A, VCB = -120 V BDT88
VBE=0, VCE = -60V
BDT82
VBE=0, VCE = -80V
VBE=0, VCE = -100V
BDT84
BDT86
-
VBE=0, VCE = -120V
BDT88
BDT82
VEB= -7 V
IC=0
BDT84
BDT86
-
BDT88
BDT82
IC= -50mA
VCE= -10V
BDT84
BDT86
40
BDT88
BDT82
IC= -5A
VCE= -4V
BDT84
BDT86
40
BDT88
BDT82
IC= -5A
IB= -0.5A
BDT84
BDT86
-
BDT88
BDT82
IC= -5A
IB= -0.5A
BDT84
BDT86
-
BDT88
BDT82
IC= -7A
IB= -0.7A
BDT84
BDT86
-
BDT88
- -0.2 mA
-
-1 mA
- -0.1 mA
-
-
-
-
-
-
-1
V
- -1.6
- -1.5 V
09/11/2012
COMSET SEMICONDUCTORS
2|4
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