BDT82F 查看數據表（PDF） - New Jersey Semiconductor
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BDT82F Datasheet PDF : 2 Pages
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Silicon PNP Power Transistors
BDT82F/84F/86F/88F
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT82F
Collector-Emitter
VcEO(SUS) Sustaining Voltage
BDT84F
BDT86F
i,— ^nmA- ir,— n
BDT88F
VcE(sat)-1 Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A
VcE(sat)-2 Collector-Emitter Saturation Voltage lc= -7A; IB= -0.7A
VeE(on) Base-Emitter On Voltage
lc=-5A;VCE=-4V
ICES
Collector Cutoff Current
VOE= O.SVcBOmax; VBE= 0
ICBO
Collector Cutoff Current
VCB- VcBOmax! le= 0
IEBO
hpE-1
Emitter Cutoff Current
DC Current Gain
VEB= -7V; lc= 0
lc=-50mA;VCE=-10V
hFE-2
DC Current Gain
lc= -5A ; VCE= -4V
fr
Current-Gain—Bandwidth Product
lc=-0.5A;VCE=-10V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
| _ — 7 A - 1 — Ir, — n 7 A
MIN TYP. MAX UNIT
-60
-80
V
-100
-120
-1.0
V
-1.6 V
-1.5
V
-1 mA
-0.2 mA
-0.1 mA
40
40
20
MHz
1 us
2
US
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