BDX66C_ 查看數據表（PDF） - Inchange Semiconductor
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BDX66C_ Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ; IB=0;L=25mH
VCEsat
ICBO
ICEO
Collector-emitter saturation voltage IC=-10A ;IB=-40mA
Collector cut-off current
VCB=-70V; IE=0
TC=150℃
Collector cut-off current
VCE=-60V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
Switching times
ton
Turn-on time
toff
Turn-off time
IC=-10A ;
IB1=-IB2=0.04A
VCC=12V ;
Product Specification
BDX66C
MIN TYP. MAX UNIT
-120
V
-2
V
-1
-5
mA
-3
mA
-5
mA
1.0
μs
3.5
μs
2
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