CSC2371
Emitter-base voltage (open collector)
Collector current
Total power dissipation up to TA = 25°C
Total power dissipation up to TC = 25°C
Junction temperature
Storage temperature
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 200 V
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 1 mA; IB = 0
IC = 0.1 mA; IE = 0
IE = 0.1 mA; IC = 0
Saturation voltage
IC = 30 mA; IB = 3 mA
D.C. current gain
IC = 10 mA; VCE = 10 V**
Output capacitance at f = 1MHz
IE = 0, VCB = 20V
Transition frequency
IC = 10 mA; VCE = 30 V
VEBO
IC
Ptot
Ptot
Tj
Tstg
max. 7.0 V
max. 100 mA
max. 1.25 W
max.
10 W
max. 150 ºC
–65 to +150 ºC
ICBO
IEBO
VCEO
VCBO
VEBO
VCEsat
hFE
Co
fT
max.
max.
min.
min.
min.
max.
min.
max.
max
min.
100 nA
100 nA
300 V
300 V
7V
1.5 V
40
250
3.0 pF
50 MHz
** hFE classification: N: 40-80 M: 60-120 L: 100-200 K: 160-250
Continental Device India Limited
Data Sheet
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