CHT5551SPT 查看數據表（PDF） - CHENMKO CO., LTD.
零件编号
产品描述 (功能)
生产厂家
CHT5551SPT Datasheet PDF : 2 Pages
| |||
RATING CHARACTERISTIC CURVES ( CHT5551SPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1.Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
357
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
ICBO
IEBO
PARAMETER
collector cut-off current
collector cut-off current
emitter cut-off current
CONDITIONS
VCB = 120 V
VCB = 120 V,TA=100OC
VEB=4.0V
MIN.
−
−
−
MAX.
50
50
50
UNIT
nA
uA
nA
hFE
DC current gain
IC = 1.0 mA; VCE = 5V
IC = 10mA; VCE = 5V
IC = 50 mA; VCE =5V
80
−
80
250
30
−
VCEsat
VBEsat
Cob
hfe
fT
F
collector-emitter saturation
IC = 10 mA; IB = 1.0 m A
−
voltage
IC =-50 mA; IB = 5.0 m A
−
base-emitter saturation voltage IC =10mA; IB =1.0mA
IC =-50 mA; IB = 5.0 m A
−
−
collector capacitance
IE = ie = 0; VCB = 1 0 V; f = 1 MHz −
VCE=10V,IC=1.0mA,f=1.0KHz
50
transition frequency
noise Þgure
IC = 10 mA; VCE = 1 0 V;
100
f = 1.0 MHz
IC = 200 mA; VCE= 5 V; RS = 1 0 Ω;
f =10Hz to 15.7KHz
−
0.15
0.2
1.0
1.0
6.0
200
300
8.0
V
V
V
V
pF
MHz
dB
Share Link: 