IRF630 查看數據表（PDF） - STMicroelectronics

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IRF630

N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET

STMicroelectronics 

IRF630

IRF630FP

N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP

Mesh overlay™ II Power MOSFET

General features

Type

IRF630

IRF630FP

VDSS

200V

200V

RDS(on)

ID

<0.40Ω

9A

<0.40Ω

9A

■ Extremely high dv/dt capability

■ Very low intrinsic capacitances

■ Gate charge minimized

Description

This power MOSFET is designed using the

company’s consolidated strip layout-based MESH

OVERLAY™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

Applications

■ Switching application

3

2

1

TO-220

3

2

1

TO-220FP

Internal schematic diagram

Order codes

Part number

IRF630

IRF630FP

August 2006

Marking

IRF630

IRF630FP

Package

TO-220

TO-220FP

Rev 9

Packaging

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