STP45NF06(2010) 查看數據表（PDF） - STMicroelectronics

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STP45NF06
(Rev.:2010)

N-channel 60 V, 0.023 Ω, 38 A TO-220, D2PAK STripFETTM II Power MOSFET

STMicroelectronics 

STB45NF06, STP45NF06

Electrical characteristics

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 38 A, VGS=0

ISD = 34 A,

di/dt = 100A/µs,

VDD = 10 V, Tj = 150°C

(see Figure 15)

38 A

152 A

1.5 V

65

ns

150

nC

5

A

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Pulse width limited by safe operating area.

Doc ID 7433 Rev 5

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