PZTA14 查看數據表（PDF） - Philips Electronics

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PZTA14

NPN Darlington transistor

Philips Electronics 

Philips Semiconductors

NPN Darlington transistor

Product specification

PZTA14

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

Rth j-s

thermal resistance from junction to ambient

thermal resistance from junction to soldering point

note 1

100

K/W

19

K/W

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

ICBO

ICES

IEBO

hFE

VCEsat

VBEon

fT

collector cut-off current

collector cut-off current

emitter cut-off current

DC current gain

collector-emitter saturation voltage

base-emitter on-state voltage

transition frequency

IE = 0; VCB = 30 V

VBE = 0; VCE = 30 V

IC = 0; VEB = 10 V

VCE = 5 V; (see Fig.2)

IC = 10 mA

IC = 100 mA

IC = 100 mA; IB = 0.1 mA

IC = 100 mA; VCE = 5 V

IC = 10 mA; VCE = 5 V; f = 100 MHz

−

−

−

10 000

20 000

−

−

125

MAX.

100

100

100

UNIT

nA

nA

nA

−

−

1.5

V

2

V

−

MHz

1999 Apr 14

3

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