2SD1626 查看數據表（PDF） - SANYO -> Panasonic

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产品描述 (功能)

生产厂家

2SD1626

PNP/NPN Epitaxial Planar Silicon Transistors

SANYO -> Panasonic 

Parameter

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

2SB1126/2SD1626

Symbol

Conditions

VCE(sat)

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

IC=(–)500mA, IB=(–)0.5mA

IC=(–)500mA, IB=(–)0.5mA

IC=(–)10µA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)10µA, IC=0

Ratings

Unit

min typ max

(–)0.9 (–)1.5 V

(–)1.5 (–)2.0 V

(–)80

V

(–)50

V

(–)10

V

No.1721–2/3

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