TN6717A 查看數據表（PDF） - Fairchild Semiconductor
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TN6717A Datasheet PDF : 12 Pages
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NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
IC = 10 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCB = 60 V, IE = 0
VEB = 5.0 V, IC = 0
80
V
80
V
5.0
V
0.1
µA
0.1
µA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 50 mA, VCE = 1.0 V
IC = 250 mA, VCE = 1.0 V
IC = 500 mA, VCE = 1.0 V
IC = 250 mA, IB = 10 mA
IC = 250 mA, VCE = 1.0 V
80
50
250
20
0.35
V
1.2
V
SMALL SIGNAL CHARACTERISTICS
hfe
Small-Signal Current Gain
Ccb
Collector-Base Capacitance
IC = 200 mA, VCE = 5.0 V,
f = 20 MHz
2.5
25
VCB = 10 V, IE = 0, f = 1.0 MHz
30
pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
3
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
3 00
2 50
125 °C
V CE = 5V
2 00
25 °C
1 50
1 00
- 40 °C
50
0
0.0 01
0 .01
0.1
I C - COLLECTOR CURRENT (A)
1 1.5
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
0.4 β = 10
0.3
0.2
0.1
0
0.01
25 °C
125 °C
- 40 °C
0.1
1
I C - COLLE CTOR CURRENT (A)
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