
Hamamatsu Photonics
GaAsP photodiode Red sensitivity extended type Diffusion type

Hamamatsu Photonics
GaAsP photodiode Red sensitivity extended type Diffusion type

Hamamatsu Photonics
GaAsP photodiode Red sensitivity extended type Diffusion type

Hamamatsu Photonics
GaAsP photodiode

Hamamatsu Photonics
GaAsP photodiode Red sensitivity extended type Diffusion type

Global Components and Controls
Relay. Nominal voltage 12VDC. Resistance(±10%) 130W. Contact material AgMeO1. Contact arrangement: 1 form W. Open.

Global Components and Controls
Relay. Nominal voltage 12VDC. Resistance(±10%) 130W. Contact material AgMeO1. Contact arrangement: 1 form W. Open.

Global Components and Controls
Relay. Nominal voltage 12VDC. Resistance(±10%) 130W. Contact material AgMeO1. Contact arrangement: 1 form W. Open.

Global Components and Controls
Relay. Nominal voltage 12VDC. Resistance(±10%) 130W. Contact material AgMeO1. Contact arrangement: 1 form W. Open.

Global Components and Controls
Relay. Nominal voltage 12VDC. Resistance(±10%) 130W. Contact material AgMeO1. Contact arrangement: 1 form W. Open.

Global Components and Controls
Relay. Nominal voltage 12VDC. Resistance(±10%) 130W. Contact material AgMeO1. Contact arrangement: 1 form W. Open.

Global Components and Controls
Relay. Nominal voltage 12VDC. Resistance(±10%) 130W. Contact material AgMeO1. Contact arrangement: 1 form W. Open.