PUMD48 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PUMD48 Datasheet PDF : 12 Pages
| |||
Philips Semiconductors
NPN/PNP resistor-equipped transistors
Product Specification
PUMD48
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SC-88 standard mounting conditions.
VALUE
416
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
ICBO
collector cut-off current
ICEO
collector cut-off current
Transistor TR1 (NPN)
IE = 0; VCB = 50 V
−
IB = 0; VCE = 30 V
−
IB = 0; VCE = 30 V; Tj = 150 °C −
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
−
hFE
DC current gain
IC = 5 mA; VCE = 5 V
80
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
−
Vi(off)
input-off voltage
IC = 100 µA; VCE = 5 V
−
Vi(on)
input-on voltage
IC = 2 mA; VCE = 0.3 V
3
R1
input resistor
33
RR-----21--
resistor ratio
0.8
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz −
Transistor TR2 (PNP)
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
emitter cut-off current
IC = 0; VEB = −5 V
DC current gain
IC = −10 mA; VCE = −5 V
collector-emitter saturation voltage IC = −5 mA; IB = −0.25 mA
input-off voltage
IC = −100 µA; VCE = −5 V
input-on voltage
IC = −5 mA; VCE = −0.3 V
input resistor
−
100
−
−
−1.1
1.54
RR-----21--
resistor ratio
17
Cc
collector capacitance
IE = ie = 0; VCB = −10 V;
−
f = 1 MHz
−
100 nA
−
1
µA
−
50
µA
−
90
µA
−
−
−
150 mV
1.2 0.8 V
1.6 −
V
47
61
kΩ
1
1.2
−
2.5 pF
−
180 µA
−
−
−
−100 mV
−0.6 −0.5 V
−0.75 −
V
2.2 2.86 kΩ
21
26
−
3
pF
1999 Apr 22
4
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