4N60 View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
4N60 Datasheet PDF : 8 Pages
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4N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Drain Current
Continuous
Pulsed (Note 2)
Single Pulsed 4N60
Avalanche Energy
(Note 3)
4N60-E
VDSS
VGSS
IAR
ID
IDM
EAS
600
V
±30
V
4.4
A
4.0
A
16
A
260
mJ
200
mJ
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
EAR
dv/dt
10.6
mJ
4.5
V/ns
TO-220/TO-262/TO-263
106
TO-220F/TO-220F1
Power Dissipation
TO-220F2
PD
36
W
38
TO-251/ TO-252
50
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
PACKAGE
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2
TO-251/ TO-252
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2
TO-251/ TO-252
SYMBOL
θJA
θJc
RATINGS
62.5
62.5
62.5
83
1.18
3.47
3.28
2.5
UNIT
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-061,Q
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