4N60 View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

4N60

4A, 600V N-CHANNEL POWER MOSFET

Unisonic Technologies 

4N60

Power MOSFET

„ ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS = 0V, ID = 250μA

600

V

Drain-Source Leakage Current

IDSS

VDS = 600V, VGS = 0V

10 μA

Forward

Gate-Source Leakage Current

Reverse

IGSS

VGS = 30V, VDS = 0V

VGS = -30V, VDS = 0V

Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C

ON CHARACTERISTICS

100 nA

-100 nA

0.6

V/°С

Gate Threshold Voltage

VGS(TH) VDS = VGS, ID = 250μA

2.0

4.0 V

Static Drain-Source On-State Resistance

RDS(ON) VGS = 10 V, ID = 2.2A

2.2 2.5 Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VDS = 25V, VGS = 0V,

f = 1MHz

520 670 pF

70 90 pF

8 11 pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

tR

VDD = 300V, ID = 4.0A,

Turn-Off Delay Time

tD(OFF)

RG = 25Ω (Note 1, 2)

Turn-Off Fall Time

tF

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

QG

QGS

QGD

VDS= 480V,ID= 4.0A,

VGS= 10V (Note 1, 2)

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

13 35 ns

45 100 ns

25 60 ns

35 80 ns

15 20 nC

3.4

nC

7.1

nC

Drain-Source Diode Forward Voltage

VSD

VGS = 0V, IS = 4.4A

Maximum Continuous Drain-Source Diode

Forward Current

IS

1.4 V

4.4 A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

17.6 A

Reverse Recovery Time

trr

VGS = 0 V, IS = 4.4A,

Reverse Recovery Charge

QRR

dIF/dt = 100 A/μs (Note 1)

Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%

250

ns

1.5

μC

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 8

QW-R502-061,Q

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