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SST25VF080B View Datasheet(PDF) - Silicon Storage Technology

Part Name
Description
Manufacturer
SST25VF080B
SST
Silicon Storage Technology SST
SST25VF080B Datasheet PDF : 36 Pages
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A Microchip Technology Company
8 Mbit SPI Serial Flash
SST25VF080B
Data Sheet
Byte-Program
The Byte-Program instruction programs the bits in the selected byte to the desired data. The selected
byte must be in the erased state (FFH) when initiating a Program operation. A Byte-Program instruction
applied to a protected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain
active low for the duration of the Byte-Program instruction. The Byte-Program instruction is initiated by
executing an 8-bit command, 02H, followed by address bits [A23-A0]. Following the address, the data is
input in order from MSB (bit 7) to LSB (bit 0). CE# must be driven high before the instruction is exe-
cuted. The user may poll the Busy bit in the software status register or wait TBP for the completion of
the internal self-timed Byte-Program operation. See Figure 7 for the Byte-Program sequence.
CE#
MODE 3
SCK MODE 0
0 1 2345 6 78
15 16
23 24 31 32 39
SI
02
ADD. ADD. ADD. DIN
MSB
MSB
MSB LSB
SO
HIGH IMPEDANCE
1296 ByteProg.0
Figure 7: Byte-Program Sequence
©2011 Silicon Storage Technology, Inc.
12
S71296-05-000
02/11

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