STF3NK80Z View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STF3NK80Z

N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VDGR

VGS

Drain-source voltage (VGS = 0)

Drain-gate voltage (RGS = 20 kΩ)

Gate-source voltage

ID Drain current (continuous) at TC = 25 °C

ID

IDM(2)

Drain current (continuous) at TC=100 °C

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

Derating factor

Gate source ESD

VESD(G-S) (HBM-C=100 pF, R=1.5 kΩ)

dv/dt (3) Peak diode recovery voltage slope

VISO

TJ

Tstg

Insulation withstand voltage (DC)

Operating junction temperature

Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 2.5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

Value

TO-220, DPAK

IPAK

TO-220FP

800

800

± 30

2.5

2.5 (1)

1.57

1.57 (1)

10

10 (1)

70

25

0.56

0.2

Unit

V

V

V

A

A

A

W

W/°C

2000

V

4.5

2500

V/ns

V

-55 to 150

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-a Thermal resistance junction-ambient max

Tl

Maximum lead temperature for soldering

purpose

TO-220

Value

TO-220FP

DPAK

IPAK

Unit

1.78

5

62.5

1.78 °C/W

100 °C/W

300

°C

Doc ID 9565 Rev 6

3/18

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