STF3NK80Z View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STF3NK80Z

N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

Electrical characteristics

STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z

Table 7.

Symbol

Source drain diode

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 2.5 A, VGS=0

ISD= 2.5 A,

di/dt = 100 A/µs,

VDD=50 V

(see Figure 21)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 2.5 A,

di/dt = 100 A/µs,

VDD=50 V, Tj=150 °C

(see Figure 21)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300 µs, duty cycle 1.5%

Min Typ. Max Unit

-

2.5 A

-

10 A

-

1.6 V

384

ns

- 1600

µC

8.4

A

474

ns

- 2100

µC

8.8

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

BVGSO(1) Gate-source breakdown voltage Igs=± 1mA (open drain) 30

-

-

V

1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

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Doc ID 9565 Rev 6

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