A1932 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
A1932 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1932
Power Amplifier Applications
Driver Stage Amplifier Applications
2SA1932
Unit: mm
• High transition frequency: fT = 70 MHz (typ.)
• Complementary to 2SC5174
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−230
V
Collector-emitter voltage
VCEO
−230
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−1
A
Base current
IB
−0.1
A
Collector power dissipation
Junction temperature
Storage temperature range
PC
1.8
W
Tj
150
°C
JEDEC
―
Tstg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10T1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 1.5 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09
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