A1932 View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

A1932

Transistor Silicon PNP Epitaxial Type

Toshiba 

2SA1932

rth – tw

300

Curves should be applied in thermal limited area.

(Single nonrepetitive pulse) Ta = 25°C

100

30

10

3

1

0.3

0.001

0.01

0.1

1

10

Pulse width tw (s)

100

1000

Safe Operating Area

−5

−3 IC max (pulsed)*

−1

−0.5

−0.3

−0.1

IC max (continuous)

1 ms*

10 ms*

100 ms*

DC operation

Ta = 25°C

−0.05

−0.03

*: Single nonrepetitive pulse

−0.01 Ta = 25°C

Curves must be derated

−0.005 linearly with increase in

temperature.

−0.003

−1

−3 −5 −10

VCEO max

−30 −50 −100

−300 −500

Collector-emitter voltage VCE (V)

PC – Ta

2.0

1.6

1.2

0.8

0.4

0

0

25

50

75 100 125 150 175

Ambient temperature Ta (°C)

4

2006-11-09

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