2SD2019 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

2SD2019

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SD2019

100,000

DC Current Transfer Ratio

vs. Collector Current

30,000

10,000

3,000

1,000

300

100

0.01 0.03 0.1 0.3

VCE = 2 V

1.0 3 10

Collector current IC (A)

Saturation Voltage vs. Collector Current

10

3

VBE (sat)

1.0

VCE (sat)

0.3

0.1

0.01 0.03 0.1 0.3

lC = 100 lB

Ta = 25°C

1.0 3 10

Collector current IC (A)

Typical Characteristics of

Emitter to Collector Diode

2.0

1.6

1.2

0.8

0.4

Ta = 25°C

0

0.4 0.8 1.2 1.6 1.8

Emitter to collector diode forward voltage

VECF (V)

4

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