2SJ438(2002) View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

2SJ438
(Rev.:2002)

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Gate leakage current

Drain cut−off current

Drain−source breakdown voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

IGSS

IDSS

V (BR) DSS

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VGS = ±16 V, VDS = 0 V

VDS = −60 V, VGS = 0 V

ID = −10 mA, VGS = 0 V

VDS = −10 V, ID = −1 mA

VGS = −4 V, ID = −2.5 A

VGS = −10 V, ID = −2.5 A

VDS = −10 V, ID = −2.5 A

VDS = −10 V, VGS = 0 V, f = 1 MHz

Rise time

tr

2SJ438

Min Typ. Max Unit

—

—

±10

µA

—

— −100 µA

−60

—

—

V

−0.8

— −2.0

V

— 0.24 0.28

Ω

— 0.16 0.19

2.0

4.0

—

S

—

630

—

—

95

—

pF

—

290

—

—

25

—

Turn−on time

ton

Switching time

Fall time

tf

—

45

—

ns

—

55

—

Turn−off time

toff

Total gate charge (Gate−source

plus gate−drain)

Qg

Gate−source charge

Qgs

VDD ≈ −48 V, VGS = −10 V, ID = −5 A

Gate−drain (“miller”) charge

Qgd

—

200

—

—

22

—

—

16

—

nC

—

6

—

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min Typ. Max Unit

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

IDR

IDRP

VDSF

trr

Qrr

—

—

—

—

IDR = −5 A, VGS = 0 V

—

—

IDR = −5 A, VGS = 0 V dIDR / dt = 50 A / µs

—

—

−5

A

—

−20

A

—

1.7

V

80

—

ns

0.1

—

µC

Marking

2

2002-09-02

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