2SK2162 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK2162 Datasheet PDF : 3 Pages
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Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain-source breakdown voltage
Gate-source cutoff current
Drain-source saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Symbol
Test Condition
IGSS
V (BR) DSS
VGS (OFF)
VDS (ON)
⎪Yfs⎪
Ciss
Coss
Crss
VDS = 0 V, VGS = ±20 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 10 mA
ID = 0.6 A, VGS = 10 V
VDS = 10 V, ID = 0.3 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
This transistor is an electrostatic-sensitive device. Handle with care.
Marking
2SK2162
Min Typ. Max Unit
⎯
⎯ ±100 nA
180 ⎯
⎯
V
1.4
⎯
2.8
V
⎯
1.7
3.0
V
⎯
0.7
⎯
S
⎯ 170 ⎯
pF
⎯
45
⎯
pF
⎯
17
⎯
pF
K2162
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-21
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