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Part Name
Description
2SK2116 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SK2116
Silicon N-Channel MOS FET
Hitachi -> Renesas Electronics
2SK2116 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK2116, 2SK2117
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
2SK2116
2SK2117
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW
≤
10
µ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Symbol
V
DSS
V
DSS
V
GSS
I
D
I *
1
D(pulse)
I
DR
Pch*
2
Tch
Tstg
Ratings
Unit
450
V
500
±
30
V
7
A
28
A
7
A
35
W
150
°
C
–55 to +150
°
C
2
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