K3457 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
K3457 Datasheet PDF : 8 Pages
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2SK3457
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 800 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 3.0 A
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 3.0 A
Input Capacitance
Ciss
VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 3.0 A
Rise Time
tr
VGS = 10 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Total Gate Charge
QG
VDD = 450 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
QGD
ID = 5.0 A
Body Diode Forward Voltage
VF(S-D)
IF = 5.0 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 5.0 A, VGS = 0 V
Reverse Recovery Charge
Qrr
di/dt = 50 A/ µs
MIN.
2.5
2.0
TYP.
1.8
1220
170
16
17
7
43
11
24
5
10
1.0
1310
6.6
MAX.
100
±100
3.5
2.2
UNIT
µA
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
IAS
ID
VDD
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
RG
RG = 10 Ω
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
ID
VGS
90%
ID
Wave Form
0 10%
td(on)
ID
tr td(off)
90%
90%
10%
tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D14754EJ1V0DS
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