56F803 View Datasheet(PDF) - Freescale Semiconductor
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Description
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56F803 Datasheet PDF : 52 Pages
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4. Thermal Characterization Parameter, Psi-JT (ΨJT ), is the “resistance” from junction to reference point
thermocouple on top center of case as defined in JESD51-2. ΨJT is a useful value to use to estimate junction
temperature in steady state customer environments.
5. Junction temperature is a function of on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal
resistance.
6. See Section 5.1 from more details on thermal design considerations.
7. TJ = Junction Temperature
TA = Ambient Temperature
3.2 DC Electrical Characteristic
Table 3-4 DC Electrical Characteristics
Operating Conditions: VSS = VSSA = 0 V, VDD = VDDA = 3.0–3.6 V, TA = –40° to +85°C, CL ≤ 50pF, fop = 80MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Input high voltage (XTAL/EXTAL)
Input low voltage (XTAL/EXTAL)
Input high voltage (Schmitt trigger inputs)1
VIHC
VILC
VIHS
2.25
—
2.75
V
0
—
0.5
V
2.2
—
5.5
V
Input low voltage (Schmitt trigger inputs)1
VILS
-0.3
—
0.8
V
Input high voltage (all other digital inputs)
Input low voltage (all other digital inputs)
Input current high (pullup/pulldown resistors
disabled, VIN=VDD)
Input current low (pullup/pulldown resistors
disabled, VIN=VSS)
Input current high (with pullup resistor, VIN=VDD)
Input current low (with pullup resistor, VIN=VSS)
Input current high (with pulldown resistor, VIN=VDD)
Input current low (with pulldown resistor, VIN=VSS)
Nominal pullup or pulldown resistor value
Output tri-state current low
Output tri-state current high
VIH
VIL
IIH
IIL
IIHPU
IILPU
IIHPD
IILPD
RPU, RPD
IOZL
IOZH
2.0
—
5.5
V
-0.3
—
0.8
V
-1
—
1
μA
-1
—
1
μA
-1
—
1
μA
-210
—
-50
μA
20
—
180
μA
-1
—
1
μA
30
KΩ
-10
—
10
μA
-10
—
10
μA
56F803 Technical Data, Rev. 16
20
Freescale Semiconductor
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