8N65 View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
8N65 Datasheet PDF : 8 Pages
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8N65
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250 μA
650
V
Drain-Source Leakage Current
IDSS
VDS = 650 V, VGS = 0 V
10 µA
Forward
Gate-Source Leakage Current
Reverse
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
IGSS
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
△BVDSS/△TJ ID =250μA,Referenced to 25°C
100 nA
-100 nA
0.7
V/°C
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250 μA
2.0
4.0 V
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10 V, ID = 4A
1.0 1.4 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25 V, VGS = 0V,
f = 1MHz
965 1255 pF
105 135 pF
12 16 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tD(ON)
tR
tD(OFF)
tF
VDD = 325V, ID =8A,
RG = 25Ω
(Note 1, 2)
16.5 45 ns
60.5 130 ns
81 170 ns
64.5 140 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS= 520V,ID=8A,
VGS= 10 V (Note 1, 2)
28 36 nC
4.5
nC
12
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS =8A
IS
1.4 V
8A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
32 A
Reverse Recovery Time
tRR
VGS = 0 V, IS =8A,
Reverse Recovery Charge
QRR
dIF/dt = 100 A/µs (Note 2)
Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%
365
ns
3.4
µC
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-591.C
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