BUV27 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
BUV27 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=50mA; IC=0
VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=0.4 A
VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=0.8A
VBEsat Base-emitter saturation voltage
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
IC=8A; IB=0.8A
VCE =240V;VBE = -1.5 V
TC=125℃
VEB=5V; IC=0
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=8A;IB1=0.8A;VCC=90V
VBE = - 6V;RBB = 3.75Ω
Product Specification
BUV27
MIN TYP. MAX UNIT
120
V
7
30
V
0.7
V
1.5
V
2
V
1
mA
1
mA
0.4 0.8 ms
0.5
1.2
μs
0.12 0.25 μs
2
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