CY7C1360A
CY7C1362A
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Voltage on VCC Supply Relative to VSS[19] .... –0.5V to +4.6V
VIN ................................................................... –0.5V to 5.5V
Storage Temperature (plastic) ...................... –55°C to +150°
Junction Temperature ..................................................+150°
Power Dissipation .........................................................1.0W
Electrical Characteristics Over the Operating Range
Short Circuit Output Current ........................................ 50 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range Ambient Temperature[18] VCC[19] VCCQ
Commercial
Industrial
0°C to +70°C
–40°C to +85°C
3.3V
−5/+10
%
2.5V – 5/
3.3V + 10%
Parameter
VIHD
VIH
VIL
ILI
ILI
ILO
VOH
VOL
VCC[19]
VCCQ
Description
Input High (Logic 1) Voltage[13, 20]
Test Conditions
All other inputs
3.3V I/O
2.5V I/O
Input Low (Logic 0) Voltage[13, 20]
3.3V I/O
2.5V I/O
Input Leakage Current
0V < VIN < VCC
MODE and ZZ Input Leakage Current[21] 0V < VIN < VCC
Output Leakage Current
Output High Voltage[13]
Output(s) disabled, 0V < VOUT < VCC
IOH = –5.0 mA for 3.3V I/O
Output Low Voltage[13]
IOH = –1.0 mA for 2.5V I/O
IOL = 8.0 mA for 3.3V I/O
Supply Voltage[13]
IOL = 1.0 mA for 2.5V I/O
I/O Supply Voltage[13]
3.3V I/O
2.5V I/O
Min.
2.0
2.0
1.7
–0.3
–0.3
-
-
2.4
2.0
3.135
3.135
2.375
Max.
Unit
VCC + 0.3 V
V
V
0.8
V
0.7
V
5
µA
30
µA
5
µA
V
V
0.4
V
0.4
V
3.63
V
3.63
V
2.9
V
Parameter
Description
ICC
VCC Operating Supply[22, 23, 24]
ISB1
Automatic CE Power-down
Current—TTL Inputs[23, 24]
ISB2
Automatic CE Power-down
Current—CMOS Inputs[23, 24]
ISB3
Automatic CE Power-down
Current—
CMOS Inputs
ISB4
Automatic CS Power-down
Current—TTL Inputs[23, 24]
Capacitance[15]
Conditions
225
Typ. MHz
Device selected; all inputs < VILor > VIH; 150 650
VCC = Max.;
outputs open, f = f MAX = 1/tcyc.
Device deselected;
150 350
all inputs < VIL or > VIH; VCC = Max.;
f = f MAX = 1/tcyc.
Device deselected; VCC = Max.;
all inputs < VSS + 0.2 or > VCC – 0.2;
all inputs static; CLK frequency = 0
5 10
Max. VDD Device Deselected, or V IN < 90 260
0.3V or VIN > VDDQ — 0.3V
f = f MAX = 1/t CYC
Device deselected; all inputs < VIL
or > VIH; all inputs static;
VCC = Max. CLK frequency = 0
15 30
Max.
200 166
MHz MHz
620 530
300 265
10 10
230 200
30 30
150
MHz Unit
480 mA
225 mA
10 mA
180 mA
30 mA
Parameter
Description
Test Conditions
Typ. Max.
CI
Input Capacitance
TA = 25°C, f = 1 MHz,
5
7
CI/O
Input/Output Capacitance (DQ) VCC = 3.3V
7
8
Notes:
18. TA is the case temperature.
19. The ground level at the start of “power on” on the VCC pins should be no greater than 200mV.
20. Overshoot: VIH < + 6.0V for t < tKC /2; undershoot:VIL < –2.0V for t < tKC /2.
21. Output loading is specified with CL=5 pF as in AC Test Loads.
22. ICC is given with no output current. ICC increases with greater output loading and faster cycle times.
23. “Device Deselected” means the device is in Power-Down mode as defined in the truth table. “Device Selected” means the device is active.
24. Typical values are measured at 3.3V, 25°C, and 20 ns cycle time.
Unit
pF
pF
Document #: 38-05258 Rev. *A
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