FDS4897AC View Datasheet(PDF) - Fairchild Semiconductor
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Description
Manufacturer
FDS4897AC Datasheet PDF : 10 Pages
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Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted
24
VGS = -10 V
20
VGS = -5 V
16
VGS = -4.5 V
VGS = - 4 V
12
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
8
VGS = -3.5 V
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. On- Region Characteristics
5
4
3
2
1
0.5
0
VGS = -3.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = -4 V
VGS = -4.5 V
4
8
12
16
-ID, DRAIN CURRENT (A)
VGS = -5 V
VGS = -10 V
20
24
Figure 16. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.8
ID = -5.2 A
1.6 VGS = -10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 17. Normalized On-Resistance
vs Junction Temperature
120
ID = -5.2 A
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
100
80
60
TJ = 125 oC
40
20
2
TJ = 25 oC
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 18. On-Resistance vs Gate to
Source Voltage
24
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
20
VDS = -5 V
16
12
TJ = 150 oC
8
TJ = 25 oC
TJ = -55 oC
4
0
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 19. Transfer Characteristics
40
VGS = 0 V
10
1
TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 20. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
7
FDS4897AC Rev.C
www.fairchildsemi.com
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