FDS4897AC View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDS4897AC Datasheet PDF : 10 Pages
| |||
Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted
10
ID = -5.2 A
8
VDD = -15 V
6
VDD = -20 V
4
VDD = -25 V
2
0
0
4
8
12
16
Qg, GATE CHARGE (nC)
2000
1000
Ciss
Coss
100
Crss
f = 1 MHz
VGS = 0 V
10
0.1
1
10
40
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 21. Gate Charge Characteristics
Figure 22. Capacitance vs Drain
to Source Voltage
10
9
8
7
6
5
4
3
TJ = 25 oC
2
TJ = 125 oC
1
0.1
1
10
40
tAV, TIME IN AVALANCHE (ms)
Figure 23. Unclamped Inductive
Switching Capability
6
5
4
VGS = -10 V
3
VGS = -4.5 V
2
1
RθJA = 78 oC/W
0
25
50
75
100
125
150
TC, AMBIENT TEMPERATURE (oC)
Figure 24. Maximum Continuous Drain
Current vs Ambient Temperature
30
100 us
10
1 THIS AREA IS
LIMITED BY rds(on)
1 ms
10 ms
100 ms
0.1
0.01
0.01
SINGLE PULSE
TJ = MAX RATED
RθJA = 135 oC/W
TA = 25 oC
1s
10 s
DC
0.1
1
10
100 200
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 25. Forward Bias Safe
Operating Area
1000
VGS = -10 V
100
10
SINGLE PULSE
RθJA = 135 oC/W
1
0.5
10-4 10-3 10-2 10-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 26. Single Pulse Maximum Power
Dissipation
©2008 Fairchild Semiconductor Corporation
8
FDS4897AC Rev.C
www.fairchildsemi.com
Share Link: 