HGTG20N60C3R View Datasheet(PDF) - Harris Semiconductor
Part Name
Description
Manufacturer
HGTG20N60C3R Datasheet PDF : 6 Pages
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HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
Typical Performance Curves (Continued)
4500
4000
3500
FREQUENCY = 1MHz
CIES
3000
2500
2000
1500
1000
500
0
0
COES
CRES
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
IG REF = 1.376mA, RL = 30Ω, TC = 25oC
600
15
VCE = 600V
480
12
360
9
VCE = 200V
240
VCE = 400V
6
120
3
0
0
0 10 20 30 40 50 60 70 80 90
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
100
0.5
0.2
10-1 0.1
0.05
0.02
10-2 0.01
SINGLE PULSE
10-3
10-5
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Test Circuit and Waveform
RG = 10Ω
L = 1mH
RURP1560
+
VDD = 480V
-
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
90%
VGE
VCE
ICE
10%
EOFF EON
90%
10%
tD(OFF)I tFI
tRI
tD(ON)I
FIGURE 17. SWITCHING TEST WAVEFORMS
5-7
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