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HYB39S64800BT View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
HYB39S64800BT
Infineon
Infineon Technologies Infineon
HYB39S64800BT Datasheet PDF : 53 Pages
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HYB 39S64400/800/160BT(L)
64-MBit Synchronous DRAM
Electrical Characteristics
Absolute Maximum Ratings
Operating Temperature Range.......................................................................................0 to + 70 °C
Storage Temperature Range .................................................................................. – 55 to + 150 °C
Input/Output Voltage......................................................................................... – 0.3 to VDD + 0.3 V
Power Supply Voltage VDD/VDDQ.............................................................................. – 0.3 to + 4.6 V
Power Dissipation ....................................................................................................................... 1 W
Data Out Current (short circuit)............................................................................................... 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Recommended Operation and DC Characteristics
TA = 0 to 70 °C; VSS = 0 V; VDD,VDDQ = 3.3 V ± 0.3 V
Parameter
Symbol
Limit Values
min.
max.
Input High Voltage
VIH
2.0
Input Low Voltage
VIL
– 0.3
Output High Voltage (IOUT = – 4.0 mA)
VOH
2.4
Output Low Voltage (IOUT = 4.0 mA)
VOL
Input Leakage Current, any input
II(L)
–5
(0 V < VIN < VDDQ, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V < VOUT < VDD)
IO(L)
–5
VDD + 0.3
0.8
0.4
5
5
Unit Notes
V
1, 2
V
1, 2
V–
V–
µA –
µA –
Notes
1. All voltages are referenced to VSS
2. VIH may overshoot to VDD + 2.0 V for pulse width of < 4 ns with 3.3 V. VIL may undershoot to
– 2.0 V for pulse width < 4.0 ns with 3.3 V. Pulse width measured at 50% points with amplitude
measured peak to DC reference.
Capacitance
TA = 0 to 70 °C; VDD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Input Capacitance (CLK)
Input Capacitance
(A0 - A11, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
Input/Output Capacitance (DQ)
Symbol
CI1
CI2
Values
min. max.
2.5
3.5
2.5
3.8
Unit
pF
pF
CIO
4.0
6.0
pF
Data Book
15
12.99

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