HYB39S64800BT View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

HYB39S64800BT

64-MBit Synchronous DRAM

Infineon Technologies 

HYB 39S64400/800/160BT(L)

64-MBit Synchronous DRAM

AC Characteristics (cont’d)1, 2

TA = 0 to 70 °C; VSS = 0 V; VDD = 3.3 V ± 0.3 V, tT = 1 ns

Parameter

Symb.

Limit Values

Unit Note

-7.5

-8

min. max. min. max.

Refresh Period

(4096 cycles)

Self Refresh Exit Time

tREF

–

tSREX

1

64 –

–

1

64 ms –

–

CLK 6

Read Cycle

Data Out Hold Time

tOH

3

–

3

–

ns 2

Data Out to Low Impedance Time tLZ

1

–

0

–

ns –

Data Out to High Impedance Time tHZ

3

7

3

8

ns –

DQM Data Out Disable Latency

tDQZ

–

2

–

2

CLK –

Write Cycle

Write Recovery Time

DQM Write Mask Latency

tWR

2

–

2

–

CLK –

tDQW

0

–

0

–

CLK –

Data Book

18

12.99

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