IS25LD256C View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

Manufacturer

IS25LD256C

256Kbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface

Integrated Silicon Solution 

IS25LD256C

DEVICE OPERATION (CONTINUED)

FAST_READ COMMAND (FAST READ DATA) OPERATION

The FAST_READ instruction is used to read memory

data at up to a 100 MHz clock.

The first byte addressed can be at any memory

location. The address is automatically incremented

The FAST_READ instruction code is followed by three after each byte of data is shifted out. When the highest

address bytes (A23 - A0) and a dummy byte (8 clocks), address is reached, the address counter will roll over to

transmitted via the SI line, with each bit latched-in

the 000000h address, allowing the entire memory to be

during the rising edge of SCK. Then the first data byte read with a single FAST_READ instruction. The

addressed is shifted out on the SO line, with each bit FAST_READ instruction is terminated by driving CE#

shifted out at a maximum frequency fCT, during the

high (VIH).

falling edge of SCK.

Figure 13. Fast Read Data Sequence

SIO

SIO

Integrated Silicon Solution, Inc.- www.issi.com

18

Rev. A

09/11/2012

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