IS42S16800E View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

Manufacturer

IS42S16800E

16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM

Integrated Silicon Solution 

IS42S81600E, IS42S16800E

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Parameters

Vdd max

Maximum Supply Voltage

Vddq max

Maximum Supply Voltage for Output Buffer

Vin

Input Voltage

Vout

Output Voltage

Pd max

Allowable Power Dissipation

Ics Output Shorted Current

Topr

Operating Temperature

Com.

Ind.

Tstg

Storage Temperature

Rating

–0.5 to +4.6

–0.5 to +4.6

–0.5 to Vdd + 0.5

–1.0 to Vddq + 0.5

1

50

0 to +70

–40 to +85

–55 to +150

Unit

V

V

V

V

W

mA

°C

°C

Notes:

1.  Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to

the device. This is a stress rating only and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliability.

2.  All voltages are referenced to Vss.

DC RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min.

Typ.

Max. Unit

Vdd

Supply Voltage

3.0

3.3

3.6

V

Vddq

I/O Supply Voltage

3.0

3.3

3.6

V

Vih(1)

Input High Voltage

2.0

—

Vddq + 0.3 V

Vil(2)

Input Low Voltage

-0.3

—

+0.8

V

Note:

1. Vih (max) = Vddq +1.2V (pulse width < 3ns).

2. Vil (min) = -1.2V (pulse width < 3ns).

3.  All voltages are referenced to Vss.

CAPACITANCE CHARACTERISTICS (At Ta = 0 to +25°C, Vdd = Vddq = 3.3 ± 0.3V)

Symbol Parameter

Min.

-5

Cin1

Input Capacitance: CLK

2.5

3.5

Cin2

Input Capacitance:All other input pins

2.5

3.8

Ci/o

Data Input/Output Capacitance:I/Os

4.0

6.5

Max.

-6 -7 -75E

3.5 4.0 4.0

3.8 5.0 5.0

6.5 6.5 6.5

Unit

pF

pF

pF

Integrated Silicon Solution, Inc. — www.issi.com

15

Rev.  B

05/27/09

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