K4B1G0446C View Datasheet(PDF) - Samsung

Part Name

Description

Manufacturer

K4B1G0446C

1Gb C-die DDR3 SDRAM Specification

Samsung 

K4B1G04(08/16)46C

1Gb DDR3 SDRAM

Note :

1. The tolerance limits are specified after calibration with stable voltage and temperature. For the behavior of the tolerance limits if temperature or voltage

changes after calibration, see following section on voltage and temperature sensitivity

2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ = VSS

3. Pull-down and pull-up ODT resistors are recommended to be calibrated at 0.5XVDDQ. Other calibration schemes may be used to achieve the linearity

spec shown above, e.g. calibration at 0.2XVDDQ and 0.8XVDDQ.

4. Not a specification requirement, but a design guide line

5. Measurement definition for RTT:

Apply VIH(ac) to pin under test and measure current I(VIH(ac)), then apply VIL(ac) to pin under test and measure current I(VIL(ac)) perspectively

RTT =

VIH(ac) - VIL(ac)

I(VIH(ac)) - I(VIL(ac))

6. Measurement definition for VM and ∆VM : Measure voltage (VM) at test pin (midpoint) with no load

∆ VM =

2 x VM

- 1 x 100

VDDQ

9.8.2 ODT Temperature and Voltage sensitivity

If temperature and/or voltage change after calibration, the tolerance limits widen according to table below

∆T = T - T(@calibration); ∆V = VDDQ - VDDQ (@calibration); VDD = VDDQ

[ Table 26 ] ODT Sensitivity Definition

Min

RTT

0.9 - dRTTdT * |∆T| - dRTTdV * |∆V|

Max

1.6 + dRTTdT * |∆T| + dRTTdV * |∆V|

[ Table 27 ] ODT Voltage and Temperature Sensitivity

Min

Max

dRTTdT

0

1.5

dRTTdV

0

0.15

These parameters may not be subject to production test. They are verified by design and characterization.

Units

RZQ/2,4,6,8,12

Units

%/°C

%/mV

Page 27 of 63

Rev. 1.0 June 2007

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