K4B1G0446C View Datasheet(PDF) - Samsung

Part Name

Description

Manufacturer

K4B1G0446C

1Gb C-die DDR3 SDRAM Specification

Samsung 

K4B1G04(08/16)46C

1Gb DDR3 SDRAM

Begin point : Rising edge of CK - CK

with ODT being first registered low

CK

CK

VRTT_Nom

DQ, DM

DQS , DQS

TDQS , TDQS

VSW2

tAOFPD

End point Extrapolated point at VRTT_Nom

VSW1

TSW2

TSW1

VTT

VSSQ

Figure 18. Definition of tAOFPD

Begin point : Rising edge of CK - CK

defined by the end point of ODTLcnw

CK

Begin point : Rising edge of CK - CK defined by

the end point of ODTLcwn4 or ODTLcwn8

VTT

CK

VRTT_Nom

tADC

End point Extrapolated point at VRTT_Nom

DQ, DM

DQS , DQS

TDQS , TDQS

End point

Extrapolated point

at VRTT_Nom

TSW21

TSW11

VSW1

VSW2

VRTT_Wr

tADC

VRTT_Nom

TSW22

TSW12

End point Extrapolated point at VRTT_Wr

VSSQ

Figure 19. Definition of tADC

Page 30 of 63

Rev. 1.0 June 2007

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