K4B1G0446D View Datasheet(PDF) - Samsung
Part Name
Description
Manufacturer
K4B1G0446D Datasheet PDF : 60 Pages
| |||
K4B1G04(08/16)46D
1Gb DDR3 SDRAM
9.7.1 Output Drive Temperature and Voltage sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to table 23 and 24.
∆T = T - T(@calibration); ∆V = VDDQ - VDDQ (@calibration); VDD = VDDQ
*dRONdT and dRONdV are not subject to production test but are verified by design and characterization
[ Table 23 ] Output Driver Sensitivity Definition
Min
RONPU@VOHDC
0.6 - dRONdTH * |∆T| - dRONdVH * |∆V|
RON@VOMDC
0.9 - dRONdTM * |∆T| - dRONdVM * |∆V|
RONPD@VOLDC
0.6 - dRONdTL * |∆T| - dRONdVL * |∆V|
Max
1.1 + dRONdTH * |∆T| + dRONdVH * |∆V|
1.1 + dRONdTM * |∆T| + dRONdVM * |∆V|
1.1 + dRONdTL * |∆T| + dRONdVL * |∆V|
Units
RZQ/7
RZQ/7
RZQ/7
[ Table 24 ] Output Driver Voltage and Temperature Sensitivity
Speed Bin
800/1066/1333
Min
Max
dRONdTM
0
1.5
dRONdVM
0
0.15
dRONdTL
0
1.5
dRONdVL
0
0.15
dRONdTH
0
1.5
dRONdVH
0
0.15
1600
Min
Max
0
1.5
0
0.13
0
1.5
0
0.13
0
1.5
0
0.13
Units
%/°C
%/mV
%/°C
%/mV
%/°C
%/mV
9.8 On-Die Termination (ODT) Levels and I-V Characteristics
On-Die Termination effective resistance RTT is defined by bits A9, A6 and A2 of MR1 register.
ODT is applied to the DQ,DM, DQS/DQS and TDQS,TDQS (x8 devices only) pins.
A functional representation of the on-die termination is shown below. The individual pull-up and pull-down resistors (RTTpu and RTTpd) are defined as
follows :
RTTpu =
RTTpd =
VDDQ-VOUT
l Iout l
VOUT
l Iout l
under the condition that RTTpd is turned off
under the condition that RTTpu is turned off
On-Die Termination : Definition of Voltages and Currents
To
other
circuitry
like
RCV,
...
Chip in Termination Mode
ODT
VDDQ
Ipu
RTT
Pu
RTT
Pd
Ipd
Iout=Ipd-Ipu
DQ
Iout
VOUT
VSSQ
Figure 12. On-Die Termination : Definition of Voltages and Currents
Page 23 of 60
Rev. 1.1 August 2008
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