K4B1G0446D View Datasheet(PDF) - Samsung

Part Name

Description

Manufacturer

K4B1G0446D

1Gb D-die DDR3 SDRAM Specification

Samsung 

K4B1G04(08/16)46D

1Gb DDR3 SDRAM

Note :Clock and Strobe are drawn on a different time scale.

tIS

tIH

CK

CK

DQS

DQS

VDDQ

tDS tDH

VIH(AC) min

VIH(DC) min

dc to VREF

region

VREF(DC)

dc to VREF

region

VIL(DC) max

tangent

line

VIL(AC) max

tIS tIH

tDS tDH

nominal

line

tangent

line

nominal

line

VSS

Delta TR

Delta TF

HRoisldinSgleSwignRaalte=

tangent line [ VREF(DC) - VIL(DC)max ]

Delta TR

HFoalldlinSgleSwigRnaalte=

tangent line [ VIH(DC)min - VREF(DC) ]

Delta TF

Figure 28 - Illustration of tangent line for hold time tDH (for DQ with respect to strobe) and tIH

(for ADD/CMD with respect to clock)

Page 60 of 60

Rev. 1.1 August 2008

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