K4B1G0446D View Datasheet(PDF) - Samsung

Part Name

Description

Manufacturer

K4B1G0446D

1Gb D-die DDR3 SDRAM Specification

Samsung 

K4B1G04(08/16)46D

1Gb DDR3 SDRAM

Note :Clock and Strobe are drawn on a different time scale.

tIS

tIH

CK

CK

DQS

tIS tIH

DQS

VDDQ

tDS tDH

nominal

line

VIH(AC) min

VREF to ac

region

VIH(DC) min

VREF(DC)

tangent

line

tDS tDH

tVAC

tangent

line

VIL(DC) max

VIL(AC) max

nominal

line

VSS

Delta TF

VREF to ac

region

Delta TR

SeRtiuspinSgleSwignRaalt=e

tangent

line[VIH(AC)min

Delta TR

-

VREF(DC)]

Setup Slew Rate

Falling Signal =

tangent line[VREF(DC) - VIL(AC)max]

Delta TF

Figure 23. Illustration of tangent line for setup time tDS (for DQ with respect to strobe) and tIS

(for ADD/CMD with respect to clock)

Page 54 of 60

Rev. 1.1 August 2008

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