K4T1G044QQ View Datasheet(PDF) - Samsung
Part Name
Description
Manufacturer
K4T1G044QQ Datasheet PDF : 44 Pages
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K4T1G044QQ
K4T1G084QQ
K4T1G164QQ
DDR2 SDRAM
7.2 Operating Temperature Condition
Symbol
Parameter
Rating
Units
Notes
TOPER
Operating Temperature
0 to 95
°C
1, 2
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM.
2. At 85 - 95 °C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to
self refresh mode at this temperature range, an EMRS command is required to change internal refresh rate.
7.3 Input DC Logic Level
Symbol
VIH(DC)
VIL(DC)
Parameter
DC input logic high
DC input logic low
Min.
VREF + 0.125
- 0.3
Max.
VDDQ + 0.3
VREF - 0.125
Units
V
V
Notes
7.4 Input AC Logic Level
Symbol
VIH (AC)
VIL (AC)
Parameter
AC input logic high
AC input logic low
DDR2-667, DDR2-800
Min.
Max.
VREF + 0.200
VREF - 0.200
Units
V
V
7.5 AC Input Test Conditions
Symbol
Condition
Value
Units
Notes
VREF
Input reference voltage
0.5 * VDDQ
V
1
VSWING(MAX)
Input signal maximum peak to peak swing
1.0
V
1
SLEW
Input signal minimum slew rate
1.0
V/ns
2, 3
Note :
1. Input waveform timing is referenced to the input signal crossing through the VIH/IL(AC) level applied to the device under test.
2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(AC) min for rising edges and the range from VREF to VIL(AC)
max for falling edges as shown in the below figure.
3. AC timings are referenced with input waveforms switching from VIL(AC) to VIH(AC) on the positive transitions and VIH(AC) to VIL(AC) on the negative
transitions.
VSWING(MAX)
delta TF
delta TR
VDDQ
VIH(AC) min
VIH(DC) min
VREF
VIL(DC) max
VIL(AC) max
VSS
Falling Slew =
VREF - VIL(AC) max
delta TF
Rising Slew =
VIH(AC) min - VREF
delta TR
< AC Input Test Signal Waveform >
12 of 44
Rev. 1.01 November 2007
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