LH28F008SCL-12 View Datasheet(PDF) - Sharp Electronics

Part Name

Description

Manufacturer

LH28F008SCL-12

Flash Memory 8M (1M ×8)

Sharp Electronics 

LHF08CH3

5.2.8 BLOCK ERASE, BYTE WRITE AND LOCK-BIT CONFIGURATION PERFORMANCE(3y4)

ttFWHHnQ”2Vs

tfFWHH()Q“4V4

twHRH1

~

Set Lock-Bit Time

Clear Block Lock-Bits Time

Byte Write Suspend Latency Time to

Read

2

12

150

10

100

lJ=

2

1.1

5

1

4

S

5.6

7

5.2

7.5

lJ=

iwHRH2 Erase Suspend Latency Time to Read

FHRH7

‘4OTES:

9.4

13.1

9.8

12.6

I.=

I. Typical values measured at TA=+25”C and nominal voltages. Assumes corresponding lock-bits are not set.

Subject to change based on device characterization.

!. Excludes system-level overhead.

3. Sampled but not 100% tested.

I. Block erase, byte write and lock-bit configuration operations with Vccc3.OV and/or VPPc3.0V are not

guaranteed.

Rev. 1.3

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